In Situ H-Radical Surface Treatment on Aluminum Gallium Nitride for High-Performance Aluminum Gallium Nitride/Gallium Nitride MIS-HEMTs Fabrication

In this work, we demonstrated a low current collapse normally on Al2O3/AlGaN/GaN MIS-HEMT with in situ H-radical surface treatment AlGaN. The atomic pretreatment was performed specially designed chamber prior to the thermal ALD-Al2O3 deposition, which improved Al2O3/AlGaN interface Dit of ~2 × 1012 cm−2 eV−1, and thus effectively reduced dynamic Ron degradation. devices showed good electrical performance Vth hysteresis peak trans-conductance 107 mS/mm. Additionally, when operated under 25 °C pulse-mode stress measurement VDS,Q = 40 V (period 1 ms, pulse width μs), increase ~14.1% achieved.